Highly Reliable High-Speed 1.1-μm-Range VCSELs With InGaAs/GaAsP-MQWs
Highly Reliable High-Speed 1.1-μm-Range VCSELs With InGaAs/GaAsP-MQWs
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DOI：
10.1109/jqe.2010.2040583
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发表时间：
2010-06-01
影响因子：
2.5
通讯作者：
Tsuji, Masayoshi
中科院分区：
文献类型：
--
作者：
Hatakeyama, Hiroshi;Anan, Takayoshi;Tsuji, Masayoshi
本文描述了用于大规模光互连应用的高速1.1微米量级氧化物限制垂直腔面发射激光器(VCSEL)。为了在高温下实现高达25Gbit/S的数据传输速率，我们采用了应变补偿多量子阱(SC-MQW)作为有源层。所开发的装置在100℃下显示了25Gbit/S的无误差工作。我们还通过加速寿命试验检验了VCSELs的可靠性。结果表明，在150℃的环境温度和约19kA/cm(2)的电流密度下，MTTF中的寿命非常长，约为1万小时。可靠性水平等于或超过了传统的0.85微米垂直腔面发射激光器。此外，我们还揭示了器件的典型失效模式，它是由电流孔径区域下n-DBR层中产生的暗线缺陷(DLD)引起的。
In this paper, we describe high-speed 1.1-mu m-range oxide-confined vertical-cavity surface-emitting lasers (VCSELs) for large-scale optical interconnection applications. For achieving high data rates up to 25 Gbit/s under high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100 degrees C. We also examined reliability of the VCSELs through accelerated life tests. The result showed an extremely long lifetime of about 10 thousand hours in MTTF under an ambient temperature of 150 degrees C and a current density of about 19 kA/cm(2). The level of reliability either equaled or surpassed that of conventional 0.85-mu m VCSELs. Moreover, we revealed a typical failure mode of the device, which was caused by < 110 > dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.