InAs/InP radial nanowire heterostructures as high electron mobility devices
InAs/InP radial nanowire heterostructures as high electron mobility devices
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DOI：
10.1021/nl072024a
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发表时间：
2007-10-01
期刊：
影响因子：
10.8
通讯作者：
Lieber, Charles M.
中科院分区：
文献类型：
--
作者：
Jiang, Xiaocheng;Xiong, Qihua;Lieber, Charles M.
径向核/壳纳米线是一类重要的一维体系，在探索基础材料的电子和光子性质方面具有巨大的潜力。在这里，我们报告的合理设计和合成的InAs/InP核/壳NW异质结构的量子限制，高迁移率的电子载流子。透射电子显微镜的研究表明，单晶InAs的核心与外延InP壳2-3 nm的厚度，和能量色散X射线光谱分析进一步证实了设计的异质结构的组成。InAsAnP NW场效应晶体管（NWFET）的室温电学测量显示，与平行制造的InAs NWFET相比，其导通电流和导通电阻显著改善，室温电子迁移率为11500 cm（2）/Vs，显著高于其他合成的1D纳米结构。此外，NWFET器件配置有集成的高介电常数栅极氧化物和顶栅结构，产生了高达3.2 mA/μ m的按比例缩放的导通电流，这是大于其他n沟道FET报告的值。高电子迁移率InAs/InP纳米线的设计和实现扩展了我们的纳米级积木工具箱，并为量子相干传输和高速，低功耗纳米电子电路的基础和应用研究开辟了机会。
Radial core/shell nanowires (NWs) represent an important class of one-dimensional (1D) systems with substantial potential for exploring fundamental materials electronic and photonic properties. Here, we report the rational design and synthesis of InAs/InP core/shell NW heterostructures with quantum-confined, high-mobility electron carriers. Transmission electron microscopy studies revealed single-crystal InAs cores with epitaxial InP shells 2-3 nm in thickness, and energy-dispersive X-ray spectroscopy analysis further confirmed the composition of the designed heterostructure. Room-temperature electrical measurements on InAsAnP NW field-effect transistors (NWFETs) showed significant improvement in the on-current and transconductance compared to InAs NWFETs fabricated in parallel, with a room-temperature electron mobility, 11500 cm(2)/Vs, substantially higher than other synthesized 1D nanostructures. In addition, NWFET devices configured with integral high dielectric constant gate oxide and top-gate structure yielded scaled on-currents up to 3.2 mA/mu m, which are larger than values reported for other n-channel FETs. The design and realization of high electron mobility InAs/InP NWs extends our toolbox of nanoscale building blocks and opens up opportunities for fundamental and applied studies of quantum coherent transport and high-speed, low-power nanoelectronic circuits.