In-Plane Biaxial Strain Evaluation Induced in Ge1-XSnx Films Using Oil-Immersion Raman Spectroscopy
In-Plane Biaxial Strain Evaluation Induced in Ge1-XSnx Films Using Oil-Immersion Raman Spectroscopy
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使用油浸拉曼光谱评估 Ge1-XSnx 薄膜中诱导的面内双轴应变
DOI：
10.1149/07508.0589ecst
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and A. Ogura
中科院分区：
文献类型：
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作者：
K. Takeuchi;K. Suda;R. Suzuki;R. Yokogawa;N. Sawamoto;K. Usuda;and A. Ogura
我们用拉曼光谱研究了Ge1-XSnX台面的各向异性应变弛豫。对于应变评估，应变位移系数b和声子形变势(PDP：P和Q)是必不可少的几个系数。利用MOCVD方法在Ge衬底上外延生长了Ge1-xSnX薄膜，得到了薄膜的b系数和pDp。拉曼光谱和X射线衍射谱的结果表明，b系数为-399.3±5.6 cm-1。在小于3.2%的锡浓度范围内，p和q的变化很小。这些系数被用来利用油浸拉曼光谱来评估图案化Ge1-XSNX台面中的双轴应变。结果，我们证实了Ge1-XSNX条纹中的单轴应变弛豫。
We performed evaluation of anisotropic strain relaxation in the patterned Ge1-xSnx mesa by Raman spectroscopy. For strain evaluation, several coefficients, eg, strain shift coefficient b and phonon deformation potentials (PDPs: p and q), are indispensable. In this study, using thin Ge1-xSnx films which were epitaxially grown on Ge substrate by MOCVD, the b coefficient and PDPs were derived. From results of Raman spectroscopy and XRD, the b coefficient was-399.3±5.6 cm-1. And, the p and q show only small variation in the Sn concentration range less than 3.2%. These derived coefficients were used to evaluate the biaxial strain in the patterned Ge1-xSnx mesa by oil-immersion Raman spectroscopy. As a result, we confirmed uniaxial strain relaxation in the Ge1-xSnx stripe pattern.