Thin‐film transistors on molecular‐beam‐deposited polycrystalline silicon
Thin‐film transistors on molecular‐beam‐deposited polycrystalline silicon
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分子束沉积多晶硅上的薄膜晶体管
DOI：
10.1063/1.333419
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发表时间：
1984
期刊：
影响因子：
--
通讯作者：
J. Ohwada
中科院分区：
文献类型：
--
作者：
M. Matsui;Y. Shiraki;E. Maruyama;J. Ohwada
薄膜晶体管 (TFT) 采用低温（低于 600°C）工艺在透明玻璃基板上的分子束沉积 (MBD) 多晶硅 (poly-Si) 上制造。栅极电压为10 V时，TFT的场效应迁移率为40 cm2/V s，响应时间小于10 ns。 TFT 的输出特性取决于多晶硅薄膜的厚度。随着薄膜厚度的增加，阈值栅极电压和场效应迁移率分别变得更低和更高。这些结果可以用 MBD 多晶硅薄膜表面区域的厚度依赖性结晶度来解释。制作了10×10的TFT矩阵，并通过将TFT矩阵与扭曲向列液晶层结合，制作了透射式有源矩阵液晶显示面板。从器件制造和晶体管特性的角度来看，这种多晶硅 TFT 矩阵已被证明与液晶单元兼容。
Thin‐film transistors (TFT’s) have been fabricated on molecular‐beam‐deposited (MBD) polycrystalline silicon (poly‐Si) on transparent glass substrates using low temperature (below 600 °C) processes. The field‐effect mobility of the TFT is 40 cm2/V s at a gate voltage of 10 V, and the response time is less than 10 ns. Output characteristics of the TFT’s depend on the poly‐Si film thickness. The threshold gate voltage and the field‐effect mobility become lower and higher, respectively, with increasing film thickness. These results can be explained in terms of the thickness‐dependent crystallinity of the surface region in the MBD poly‐Si film. A 10×10 TFT matrix has been fabricated, and by combining the TFT matrix with a twisted‐nematic liquid‐crystal layer, a transmissive‐type active matrix liquid‐crystal display panel has been fabricated. This poly‐Si TFT matrix has proved to be compatible with a liquid‐crystal cell from the viewpoints of both device fabrication and transistor characteristics.