High-power InGaAs VCSEL's single devices and 2-D arrays
High-power InGaAs VCSEL's single devices and 2-D arrays
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DOI：
10.1117/12.635658
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发表时间：
2005-11
期刊：
影响因子：
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通讯作者：
Te Li;Y. Ning;Yan-fang Sun;L. Qin;C. Yan;Yun Liu;Lijun Wang
中科院分区：
文献类型：
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作者：
Te Li;Y. Ning;Yan-fang Sun;L. Qin;C. Yan;Yun Liu;Lijun Wang
我们报告底部发射垂直腔面发射激光器（VCSEL）和激光器阵列提供高输出功率的980 nm波长范围。在室温下，有源直径为500 μm的单器件输出功率高达1.95 W。其阈值电流为510 mA，最大空间平均光功率密度为0.93 kW/cm ~ 2。在室温下，16个阵元、200μm孔径（中心间距250μm）的连续输出功率为1.21W，平均光功率密度为1 KW/cm ~ 2。阵列的阈值电流为1.32A，激光峰值波长为981.9nm。讨论了单个器件和阵列器件发射光谱的区别。
We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 μm show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA, and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200μm aperture size (250μm center spacing) of individual elements shows a CW output power of 1.21W at room temperature, resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.