Solution-Processed Two-Dimensional Ultrathin InSe Nanosheets
Solution-Processed Two-Dimensional Ultrathin InSe Nanosheets
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DOI：
10.1021/acs.chemmater.5b04646
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发表时间：
2016-03-22
影响因子：
8.6
通讯作者：
Weller, Horst
中科院分区：
文献类型：
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作者：
Lauth, Jannika;Gorris, Friederieke E. S.;Weller, Horst
具有非零带隙的二维（2D）石墨烯相关晶体（如过渡金属二硫属化物）的兴起导致了对其维度依赖的各向异性特性的兴趣迅速增加，这些特性具有很高的电子学潜力。III-VI族金属硫属化物InSe的2D晶体代表了一种新的材料类别，注定要在光电应用中用作高响应光电探测器和场效应晶体管。我们提出了一种溶液加工的方法，用于二维纳米片的InSe（
The rise of two-dimensional (2D) graphene-cognated crystals with nonzero band gaps like transition metal dichalcogenides has led to a rapidly increasing interest in their dimensionality-dependent anisotropic properties, which bear high potential for ultrathin electronics. 2D crystals of the III-VI metal chalcogenide InSe represent a new kind of material class predestined for the use in optoelectronic applications as highly responsive photodetectors and field-effect transistors. We present a solution-processable method for 2D ultrathin InSe nanosheets (