Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis
Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis
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DOI：
10.1016/j.jcrysgro.2006.04.082
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发表时间：
2006-07-15
影响因子：
1.8
通讯作者：
Fitzgerald, E. A.
中科院分区：
文献类型：
--
作者：
Le, H. Q.;Chua, S. J.;Fitzgerald, E. A.
采用100℃水热法在GaN(001)衬底上外延生长了直径为60~120 nm、长度为2µm的单晶氧化锌纳米棒阵列。与以往报道的在衬底上预先沉积的氧化锌缓冲层成核的方法不同，该方法是真正的外延生长。在这种水热外延生长中实现了前所未有的高度c轴取向。系统研究了生长条件对氧化锌纳米棒沉积的影响。结果表明，通过改变反应物的摩尔比，可以控制纳米棒阵列的生长形态。确定了制备c轴取向高密度单晶氧化锌纳米棒的最佳工艺条件。讨论了影响氧化锌纳米棒在GaN上外延成核和生长的机理。氧化锌纳米棒在388 nm处表现出紫外光致发光，发光寿命为58ps。(C)2006爱思唯尔B.V.保留所有权利。
Single-crystalline ZnO nanorod arrays with diameters of 60-120 nm and lengths of 2 mu m have been grown epitaxially on GaN (0 0 1) by hydrothermal synthesis at 100 degrees C. The ZnO nanorods exhibit true epitaxial growth, in contrast to most of the previously reported methods, which involved the nucleation on a ZnO buffer layer pre-deposited on the substrate. An unprecedented high degree of c-axis orientation is achieved in this hydrothermal epitaxial growth. The effect of growth conditions on the deposition of ZnO nanorods was systematically studied. We showed that by changing the molar ratio of the reactants, we can control the growth morphology of the ZnO nanorod arrays. The optimal conditions to produce high-density single-crystalline ZnO nanorods with c-axis orientation have been identified. The mechanism affecting ZnO nanorod epitaxial nucleation and growth on GaN is discussed. The ZnO nanorods exhibited ultraviolet photoluminescence (PL) at 388 nm and the PL shows a decay lifetime of 58 ps. (c) 2006 Elsevier B.V. All rights reserved.