Strong magnetoelectric coupling in multiferroic Co/BaTiO3 thin films
Strong magnetoelectric coupling in multiferroic Co/BaTiO3 thin films
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DOI：
10.1103/physrevb.88.121409
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发表时间：
2013-09-23
影响因子：
3.7
通讯作者：
Barbier, A.
中科院分区：
文献类型：
--
作者：
Jedrecy, N.;von Bardeleben, H. J.;Barbier, A.
我们已经发现了在室温下多晶Co层（5-40 nm）和单晶（001）取向的BaTiO 3层（15-17 nm）之间强磁电（ME）耦合的证据。我们利用了准单极化取向，垂直于膜平面，铁电BaTiO 3域的tetraquartz相。使用铁磁共振光谱与Co磁化对准平行或反平行的钛酸钡极化，我们评估了一个强的各向异性约0.14 T的Co共振场的位置，表明耦合常数为0.27 s/F。当通过BaTiO 3的相变扫描温度时，两个谐振位置在相反的方向上移动。ME耦合引起显著的磁各向异性，导致高值的面外剩磁。我们的结果是有希望的未来多铁性器件。
We have found evidence for a strong magnetoelectric (ME) coupling at room temperature between polycrystalline Co layers (5-40 nm) and single-crystalline (001)-oriented BaTiO3 layers (15-17 nm). We took advantage of the quasi-single polarization orientation, perpendicular to the film plane, of the ferroelectric BaTiO3 domains in the tetragonal phase. Using ferromagnetic resonance spectroscopy with the Co magnetization aligned either parallel or antiparallel to the BaTiO3 polarization, we assessed a strong anisotropy of about 0.14 T in the Co resonance field positions, indicating a coupling constant of 0.27 s/F. When sweeping the temperature through the phase transitions of BaTiO3, the two resonance positions are shifted in opposite directions. The ME coupling induces a notable magnetic anisotropy resulting in high values of the out-of-plane remanent magnetization. Our results are promising for future multiferroic devices.