Control of interfacial silicate between HfO2 and Si by high concentration ozone
Control of interfacial silicate between HfO2 and Si by high concentration ozone
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DOI：
10.1063/1.2173708
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发表时间：
2006-02
影响因子：
4
通讯作者：
Liang Wang;K. Xue;Jianbin Xu;A. Huang;P. Chu
中科院分区：
文献类型：
--
作者：
Liang Wang;K. Xue;Jianbin Xu;A. Huang;P. Chu
通过高浓度臭氧低温氧化，有效地控制了HfO 2与硅衬底之间的Hf-Si界面层。这是显而易见的，通过调查的Hf 4f和Si 2 p芯能级谱的化学位移与深度，通过使用X射线光电子能谱。通过高分辨率截面透射电子显微镜进一步证实了改进的界面微观结构。从使用臭氧氧化的HfO 2作为栅介质的金属氧化物半导体电容器获得的电容-电压曲线显示出约5 mV的可忽略的滞后和低的固定电荷密度。
By high concentration ozone oxidation at low temperature, the Hf-silicate interfacial layer between HfO2 and silicon substrate is effectively controlled. This is evident by investigating the chemical shifts of the Hf4f and Si2p core-level spectra with depth by using x-ray photoelectron spectroscopy. The improved interfacial microstructure is further confirmed by high-resolution cross-sectional transmission electron microscopy. The capacitance-voltage curves, obtained from the metal-oxide-semiconductor capacitors using the ozone oxidized HfO2 as the gate dielectric, show a negligible hysteresis of about 5mV and a low fixed charge density.