Temperature-Compensated Aluminum Nitride Lamb Wave Resonators
Temperature-Compensated Aluminum Nitride Lamb Wave Resonators
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DOI：
10.1109/tuffc.2010.1443
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发表时间：
2010-03-01
影响因子：
3.6
通讯作者：
Pisano, Albert P.
中科院分区：
文献类型：
--
作者：
Lin, Chih-Ming;Yen, Ting-Ta;Pisano, Albert P.
本文从理论和实验两方面研究了利用边缘型反射器对AlN兰姆波谐振腔进行温度补偿的方法。通过添加具有适当厚度的SiO2补偿层，基于AlN和SiO2层堆叠的兰姆波谐振器可以实现零一阶频率温度系数（TCF）。使用由1 μ mAlN和0.83 μ mSiO 2组成的复合膜，在室温下，在711 MHz工作的兰姆波谐振器表现出-0.31 ppm/℃的一阶TCF和-22.3 ppb/℃ ~（-2）的二阶TCF。在-55 ° C至125 ° C的宽温度范围内，与温度相关的分数频率变化小于250 ppm。这种温度补偿的AlN兰姆波谐振器是有前途的未来应用，包括热稳定振荡器，滤波器和传感器。
In this paper, the temperature compensation of AlN Lamb wave resonators using edge-type reflectors is theoretically studied and experimentally demonstrated. By adding a compensating layer of SiO2 with an appropriate thickness, a Lamb wave resonator based on a stack of AlN and SiO2 layers can achieve a zero first-order temperature coefficient of frequency (TCF). Using a composite membrane consisting of 1 mu m AlN and 0.83 mu m SiO2, a Lamb wave resonator operating at 711 MHz exhibits a first-order TCF of -0.31 ppm/degrees C and a second-order TCF of -22.3 ppb/degrees C-2 at room temperature. The temperature-dependent fractional frequency variation is less than 250 ppm over a wide temperature range from -55 degrees C to 125 degrees C. This temperature-compensated AlN Lamb wave resonator is promising for future applications including thermally stable oscillators, filters, and sensors.