A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu
A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu
复制标题
DOI：
10.1063/1.1525885
复制
发表时间：
2002-11-25
影响因子：
4
通讯作者：
Rhie, KW
中科院分区：
文献类型：
--
作者：
Han, SJ;Song, JW;Rhie, KW
报道了室温铁磁半导体Zn_（1-x）Fex O的成功合成。在实现室温铁磁性在大块Zn 1-xFexO的基本成分被发现是额外的Cu掺杂。Zn_（0.94）Fe_（0.05）Cu_（0.01）O的相变温度高达550 K，室温下饱和磁化强度达到0.75 μ（B）/Fe。在100 K以下还观察到大的磁电阻。(C)2002年美国物理学会。
Successful synthesis of room-temperature ferromagnetic semiconductors, Zn1-xFexO, is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn1-xFexO was found to be additional Cu doping. A transition temperature as high as 550 K was obtained in Zn0.94Fe0.05Cu0.01O; the saturation magnetization at room temperature reached a value of 0.75mu(B) per Fe. A large magnetoresistance was also observed below 100 K. (C) 2002 American Institute of Physics.