Localized ohmic contact through a passivation dielectric for solar cell rear surface design
Localized ohmic contact through a passivation dielectric for solar cell rear surface design
复制标题
通过钝化电介质进行局部欧姆接触，用于太阳能电池后表面设计
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
S. Bremner
中科院分区：
文献类型：
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作者：
N. Western;A. Sung;S. Wenham;S. Bremner
我们报告的演示的方法，通过电介质钝化层，通过激光掺杂区，没有蚀刻前的金属沉积形成局部欧姆接触。与测试金属-绝缘体-半导体器件的栅极和本体接触的简单台式电压源有助于局部加热，导致欧姆接触形成。使用这种方法，在远离接触区的地方保留了陶瓷的表面钝化质量，因为硬介电击穿仅限于激光掺杂区。这是一种用于精确接触高效太阳能电池背面的潜在技术。
We report the demonstration of a method for forming localized ohmic contact through dielectric passivation layers, via a laser doped region, with no etching prior to metal deposition. A simple bench top voltage source contacted to the gate and bulk of a test Metal-Insulator-Semiconductor device facilitates localized heating leading to ohmic contact formation. The surface passivation qualities of the dielectrics are preserved away from the contact region using this method, as hard dielectric breakdown is restricted to the laser doped region. This is a potential technique for precisely contacting rear surface of high efficiency solar cells.