Nernst-Ettingshausen effects and electron scattering in GaSb
Nernst-Ettingshausen effects and electron scattering in GaSb
复制标题
GaSb 中的 Nernst-Ettingshausen 效应和电子散射
DOI：
--
复制
发表时间：
1974
期刊：
影响因子：
--
通讯作者：
J. Woolley
中科院分区：
文献类型：
--
作者：
D. Demars;J. Basinski;J. Woolley
测量了掺碲的n型GaSb单晶的Seebeck系数和纵向和横向的能斯特-艾丁斯豪森系数作为施加磁场的函数的室温值在0-3.2 Wbm-2。这些数据已被用于与先前确定的值的迁移率在伽玛1C和L1 C波段的GaSb的散射过程中给出详细的信息。Seebeck和Nernst-Ettingshausen系数的一般方程已被扩展到一个Kane带和一个抛物带的情况下，与适当的散射机制，从电输运结果确定。假设从迁移率数据确定的参数值，所有的热磁的结果已经很好地拟合的理论方程，仅使用一个可调参数。
Measurements have been made on single crystal tellurium-doped n-type GaSb to determine room temperature values of the Seebeck coefficient and of the longitudinal and transverse Nernst-Ettingshausen coefficients as a function of applied magnetic field over the range 0-3.2 Wb m-2. These data have been used in combination with the previously determined values of mobility in the Gamma 1c and L1c bands to give detailed information on the scattering processes in GaSb. The general equations for the Seebeck and Nernst-Ettingshausen coefficients have been extended to the case of one Kane band and one parabolic band, with the appropriate scattering mechanisms determined from the electrical transport results. Assuming parameter values determined from the mobility data, all of the thermomagnetic results have been well fitted to the theoretical equations using one adjustable parameter only.