Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications
Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications
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DOI：
10.1063/1.3039064
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发表时间：
2008-11-24
影响因子：
4
通讯作者：
Hwang, Hyunsang
中科院分区：
文献类型：
--
作者：
Pyun, Myeongbum;Choi, Hyejung;Hwang, Hyunsang
我们研究了铜掺杂碳（CuC）作为一种新型的电阻开关器件固态电解质材料。与CuS电解质相比，CuC器件表现出良好的存储特性，例如超过两个数量级的高电阻比、更高的操作电压和高温保持特性。使用1000个单元阵列器件，我们也证实了电阻和开关电压的均匀分布。高电阻状态和低电阻状态在85 ° C下均显示出超过10（4）s的可忽略的电阻退化，证实了良好的保持特性。
We have investigated copper-doped carbon (CuC) as a new solid-state electrolyte material for resistive switching devices. Compared with CuS electrolytes, CuC devices demonstrate good memory characteristics such as a high resistance ratio of over two orders, higher operation voltage, and high temperature retention characteristics. Using 1000 cell array devices, we have also confirmed uniform distributions of resistance and switching voltages. Both high and low resistance states showed negligible degradation of resistance for over 10(4) s at 85 degrees C, confirming good retention characteristics.