InAsSbP/InAs heterostructures for thermophotovoltaic converters: Growth technology and properties
InAsSbP/InAs heterostructures for thermophotovoltaic converters: Growth technology and properties
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用于热光伏转换器的 InAsSbP/InAs 异质结构：生长技术和性能
DOI：
10.1134/s1063785008010215
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发表时间：
2008
影响因子：
0.6
通讯作者：
Y. Yakovlev
中科院分区：
文献类型：
--
作者：
V. Gevorkyan;V. Aroutiounian;K. Gambaryan;I. Andreev;L. Golubev;Y. Yakovlev
发展了一种用于热光伏应用的砷化铟（InAs）基窄带隙半导体化合物的液相外延（LPE）技术。InAs基多组分固溶体和Eg = 0.35-0.6 eV的InAs/InAsSbP异质结构是用于在1000-2000°C的发射极温度下工作的TPV转换器的有前途的材料。新型TPV元件的灵敏度扩展到更长的波长（高达3.8 μm），这确保了低能光子的有效转换。四元InAsSbP固溶体的外延膜获得LPE从过冷溶液熔体和通过液相电外延技术与控制掺杂的生长溶液从一个单一的液体源的组件。薄膜具有均匀的成分和高度完美的晶体结构。n-InAs/p-InAsSbP异质结的反向饱和电流值接近理论预测。
A liquid phase epitaxy (LPE) technique for growing indium arsenide (InAs)based narrow-bandgap semiconductor compounds for thermophotovoltaic (TPV) applications has been developed. InAs-based multicomponent solid solutions and InAs/InAsSbP heterostructures with Eg = 0.35–0.6 eV are promising materials for TPV converters that operate at an emitter temperature of 1000–2000°C. The sensitivity of new TPV elements is extended toward longer wavelengths (up to 3.8 μm), which ensures effective conversion of low-energy photons. The epitaxial films of quaternary InAsSbP solid solutions were obtained by LPE from a supercooled solution melt and by the liquid phase electroepitaxy technique with controlled doping of a growth solution from a single liquid source of components. The films have homogeneous compositions and highly perfect crystal structures. The values of reverse saturation currents in n-InAs/p-InAsSbP heterostructures are close to theoretical predictions.