Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H–SiC(0001)
Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H–SiC(0001)
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p 型 6H–SiC(0001) 上热生长氧化物纳米膜的密度分布和电性能
DOI：
10.1063/1.1829385
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
P. Lai
中科院分区：
文献类型：
--
作者：
S. Hazra;S. Chakraborty;P. Lai
用X射线反射率技术研究了在不同氧化和氮化条件下在p型6 H碳化硅衬底上热生长的氧化硅薄膜。从X射线反射率数据的分析得到的电子密度分布表明，氧化膜的厚度，密度和氧化物-SiC界面的结构强烈地依赖于不同的生长条件。特别是，发现除了在NO中生长的样品之外的所有样品的氧化物膜的密度要低得多，并且也不固定。它是最大的界面处，并在所有的样品中，除了在O2中生长，然后NO氮化的样品逐渐向顶部减小。对于后者，在界面区域观察到非常低的密度。在NO中生长的样品在电容-电压特性和可靠性研究中表现出最好的性能，这表明在p型SiC系统上生长的氧化物作为金属-氧化物-半导体器件的性能差，主要是由于其具有良好的介电性能。
Thermally grown silicon oxide films on p-type 6H–silicon carbide substrate under different oxidation and nitridation conditions have been characterized by x-ray reflectivity technique. An electron density profile obtained from the analysis of the x-ray reflectivity data shows that the thickness, density of the oxide film, and structure of the oxide-SiC interface strongly depend on the different growth conditions. In particular, the density of the oxide film for all samples other than that grown in NO is found to be much lower and also not fixed within. It is maximum at the interface and gradually decreases toward the top in all samples except for the sample grown in O2 followed by NO nitridation. For the latter, a very low density at the interface region has been observed. The sample grown in NO shows the best performance in capacitance–voltage characteristic and reliability studies suggesting that the bad performance of the oxide grown on the p-type SiC system as metal–oxide–semiconductor devices, is mai...