Zero voltage switched chopper with SiC-MOSFETs
Zero voltage switched chopper with SiC-MOSFETs
复制标题
采用 SiC-MOSFET 的零电压开关斩波器
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
A. Kawamura
中科院分区：
文献类型：
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作者：
Y. Tsuruta;A. Kawamura
本文介绍了一种将SiC-MOSFET应用于ZVS软开关拓扑的研究，并将这种新型DC-DC变换器与传统的硅IGBT变换器进行了比较。针对高频、高效率、大功率升压斩波器的特点，提出了一种软开关拓扑结构SAZZ（snubber assisted zero voltage zero current transition）。在SAZZ电路的优化设计中，当功率斩波器输出功率不变时，可以根据SiC-MOSFET的额定电压和开关速度越来越高的要求，减小缓冲电容的电容量。在本文中，它表明，总效率的提高是可能的，减少辅助电路损耗的软开关使用SiC-MOSFET。给出了1200 V、33 A SiC-MOSFET对应于100 kHz、8 kW升压斩波器的实验结果。总效率从97.8%提高到98.5%。
This paper describes a study applying SiC-MOSFETs to soft switching topology with ZVS (zero voltage switching) and evaluating performance of new dc-dc converter when compared with conventional one with silicon IGBTs. Soft switching topology is SAZZ (snubber assisted zero voltage zero current transition) proposed for high frequency, high efficiency and high power boost chopper. In optimization of SAZZ circuit design as the same output power chopper, capacitance of snubber capacitor could be reduced according to higher and higher rating voltage and switching speed of SiC-MOSFETs. In this paper it is shown that the improvement of total efficiency is possible with reduction of auxiliary circuit loss for soft switching using SiC-MOSFETs. Experimental results corresponding to 100 kHz, 8 kW boost chopper are presented with 1200 V, 33A SiC-MOSFETs. Total efficiency is improved from 97.8 % to 98.5 %.