Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs
Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs
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DOI：
10.1073/pnas.1617186114
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发表时间：
2017-01-10
影响因子：
11.1
通讯作者：
Watanabe, Satoru
中科院分区：
文献类型：
--
作者：
Hosono, Hideo;Kim, Junghwan;Watanabe, Satoru
阴极和活性有机层之间的有效电子转移是实现高性能有机器件的关键之一，这需要具有很低功函数的电子注入/传输材料。我们研制了两种宽带隙非晶态(a-)氧化物半导体，a-铝酸钙(a-C12A7：E)和a-硅酸锌(a-ZSO)。A-ZSO具有3.5 eV的低功函数和1 cm(2)/(V)的高电子迁移率。S)；此外，它不仅与传统的正极材料，而且还与负极材料形成欧姆接触。A-C12A7：E具有3.0 eV的极低功函数，用于增强从a-ZSO到发射层的电子注入特性。用这两种材料制作的倒置纯电子和有机发光二极管(OLED)器件与普通的LiF/Al材料相比，具有优异的性能。这种方法为制备大尺寸和高稳定性的氧化物薄膜晶体管驱动的OLED提供了一种解决方案。
Efficient electron transfer between a cathode and an active organic layer is one key to realizing high-performance organic devices, which require electron injection/transport materials with very low work functions. We developed two wide-bandgap amorphous (a-) oxide semiconductors, a-calcium aluminate electride (a-C12A7:e) and a-zinc silicate (a-ZSO). A-ZSO exhibits a low work function of 3.5 eV and high electron mobility of 1 cm(2)/(V . s); furthermore, it also forms an ohmic contact with not only conventional cathode materials but also anode materials. A-C12A7:e has an exceptionally low work function of 3.0 eV and is used to enhance the electron injection property from a-ZSO to an emission layer. The inverted electron-only and organic light-emitting diode (OLED) devices fabricated with these two materials exhibit excellent performance compared with the normal type with LiF/Al. This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability.