Epitaxial nanotwinned Cu films with high strength and high conductivity
Epitaxial nanotwinned Cu films with high strength and high conductivity
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DOI：
10.1063/1.2969409
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发表时间：
2008-08-25
影响因子：
4
通讯作者：
Zhang, X.
中科院分区：
文献类型：
--
作者：
Anderoglu, O.;Misra, A.;Zhang, X.
我们报告了通过磁控溅射合成外延（类单晶）纳米孪晶铜薄膜。将沉积速率从 1 nm/s 增加到 4 nm/s，平均双片层间距从 16 nm 减少到 7 nm。这些外延纳米孪晶铜膜比柱状晶粒（纳米晶）、织构化纳米孪晶铜膜表现出显着更高的硬度与室温电阻率之比。 (C) 2008 年美国物理研究所。
We report on the synthesis of epitaxial (single-crystal-like), nanotwinned Cu films via magnetron sputtering. Increasing the deposition rate from 1 to 4 nm/s decreased the average twin lamellae spacing from 16 to 7 nm. These epitaxial nanotwinned Cu films exhibit significantly higher ratio of hardness to room temperature electrical resistivity than columnar grain (nanocrystalline), textured, nanotwinned Cu films. (C) 2008 American Institute of Physics.