Analysis of power device failure under avalanche mode Conduction
Analysis of power device failure under avalanche mode Conduction
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DOI：
10.1109/icpe.2015.7168028
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发表时间：
2015-06
期刊：
影响因子：
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通讯作者：
P. Alexakis;O. Alatise;J. Hu;S. Jahdi;J. González;L. Ran;P. Mawby
中科院分区：
文献类型：
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作者：
P. Alexakis;O. Alatise;J. Hu;S. Jahdi;J. González;L. Ran;P. Mawby
本文研究了 1.2 kV SiC MOSFET、硅 MOSFET 和硅 IGBT 雪崩期间器件失效的物理原理。针对不同技术，探讨了环境温度、雪崩击穿前器件初始条件以及雪崩持续时间的影响。进行了两种类型的测试，即（i）具有不同峰值雪崩电流的恒定雪崩持续时间和（ii）具有不同雪崩持续时间的恒定峰值雪崩电流。 SiC MOSFET 被证明是最坚固耐用的技术，其次是硅 IGBT 和硅 MOSFET。 SiC 的材料特性可抑制寄生 BJT 的触发，而寄生 BJT 会在雪崩期间导致热失控。
This paper investigates the physics of device failure during avalanche for 1.2 kV SiC MOSFETs, silicon MOSFETs and silicon IGBTs. The impact of ambient temperature, initial conditions of the device prior to avalanche breakdown and the avalanche duration is explored for the different technologies. Two types of tests were conducted namely (i) constant avalanche duration with different peak avalanche currents and (ii) constant peak avalanche current with different avalanche durations. SiC MOSFETs are shown to be the most rugged technology followed by the silicon IGBT and the silicon MOSFET. The material properties of SiC suppress the triggering of the parasitic BJT that causes thermal runaway during avalanche.