Reversible 300 K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor
Reversible 300 K Ferromagnetic Ordering in a Diluted Magnetic Semiconductor
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DOI：
10.1002/adma.200400456
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发表时间：
2004-04
影响因子：
29.4
通讯作者：
D. A. Schwartz;D. Gamelin
中科院分区：
文献类型：
--
作者：
D. A. Schwartz;D. Gamelin
报道了在稀磁半导体中发现300 K可逆铁磁有序.在"开"和"关"状态之间的室温铁磁性的切换实现在Co 2+：ZnO的晶格掺入和去除的原生n型缺陷，间隙Zn。光谱和磁性数据暗示了铁磁性的双交换机制。这些结果首次证明了在稀磁半导体中的可逆室温铁磁有序，并为在半导体传感器或基于自旋的电子器件中集成磁性和导电性提供了新的机会。
The discovery of reversible 300 K ferromagnetic ordering in a diluted magnetic semiconductor is reported. Switching of room-temperature ferromagnetism between "on" and "off" states is achieved in Co2+:ZnO by lattice incorporation and removal of the native n-type defect, interstitial Zn. Spectroscopic and magnetic data implicate a double-exchange mechanism for ferromagnetism. These results demonstrate for the first time reversible room-temperature ferromagnetic ordering in a diluted magnetic semiconductor, and present new opportunities for integrating magnetism and conductivity in semiconductor sensor or spin-based electronics devices.