Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors
Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors
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DOI：
10.1117/1.jnp.11.026005
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发表时间：
2017-04-01
影响因子：
1.5
通讯作者：
Pereira, Mauro F.
中科院分区：
文献类型：
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作者：
Oriaku, Chijioke I.;Spencer, Timothy J.;Pereira, Mauro F.
我们计算了稀相四元InAs(N，Sb)的发光。N的掺入降低了InAs和Sb的带隙，Sb起到了表面活性剂的作用，提高了N的掺入，进一步减小了带隙。因此，这对于工作在3到5微米的中红外(MIR)光谱范围内的器件来说是非常相关的。为了描述这个系统，该理论从应用于导带和价带的能带反扭曲模型开始，生成用于导致发光光谱的分析近似的输入，包括等离子体屏蔽、带隙重整化和激子增强。直接应用这些方程，得到了与最近的一些实验数据很好的吻合。(C)2017年光学仪器工程师学会(SPIE)
We calculate the luminescence of the dilute quaternary InAs(N, Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation, and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5 mu m. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization, and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data. (C) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)