A 30 V class extremely low on-resistance meshed trench lateral power MOSFET
A 30 V class extremely low on-resistance meshed trench lateral power MOSFET
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DOI：
10.1109/ispsd.2002.1016230
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发表时间：
2002-08
期刊：
影响因子：
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通讯作者：
A. Sugi;K. Tabuchi;M. Sawada;S. Kajiwara;K. Matsubara;N. Fujishima;C. Salama
中科院分区：
文献类型：
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作者：
A. Sugi;K. Tabuchi;M. Sawada;S. Kajiwara;K. Matsubara;N. Fujishima;C. Salama
提出了一种具有沟槽底部源极接触的网状沟槽横向功率MOSFET（M-TLPM/S）。M-TLPM/S沿着网状沟槽的侧壁形成。沟槽底部源极接触仅在一个方向（接触区域）上形成在漏极岛之间，导致在减小的单元间距中增加的沟道密度。所制备的M-TLPM/S的特征在于在接触和栅极区域中的器件节距分别为3.0 /spl mu/m和1.3 /spl mu/m，并且对于31 V的击穿电压表现出8.4 m/spl Ω/-mm/sup 2/的比导通电阻。
A meshed trench lateral power MOSFET with a trench bottom source contact (M-TLPM/S) is proposed, fabricated, and characterized. The M-TLPM/S is formed along the sidewalls of the meshed trench. The trench bottom source contact is formed between the drain islands in one direction only (contact area), resulting in increased channel density in reduced cell pitch. The fabricated M-TLPM/S features device pitches in the contact and gate areas of 3.0 /spl mu/m and 1.3 /spl mu/m respectively, and exhibits a specific on-resistance of 8.4 m/spl Omega/-mm/sup 2/ for a breakdown voltage of 31 V.