How to include the dependency of the RDS(on) of power MOSFETs on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters
How to include the dependency of the RDS(on) of power MOSFETs on the instantaneous value of the drain current into the calculation of the conduction losses of high-frequency three-phase PWM inverters
复制标题
如何将功率MOSFET的RDS(on)对漏极电流瞬时值的依赖性纳入高频三相PWM逆变器传导损耗的计算中
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
F. Zach
中科院分区：
文献类型：
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作者：
J. Kolar;H. Ertl;F. Zach
针对三相电压型直流链脉宽调制（PWM）功率变换器系统中功率MOSFET的导通损耗进行了解析计算。与传统的计算相反，导通行为对漏极电流的依赖性被认为是在二次近似方面。导出的关系以图形方式表示;它们可以直接包含在功率晶体管的尺寸中。
In this paper, the conduction losses of power MOSFETs are calculated analytically for application in three-phase voltage DC-link pulsewidth modulation (PWM) power converter systems. Contrary to a conventional calculation, the dependency of the turn-on behavior on the drain current is considered in terms of a quadratic approximation. The derived relationships are represented graphically; they can be included directly into the dimensioning of the power transistors.