A new charge pump without degradation in threshold voltage due to body effect [memory applications]
A new charge pump without degradation in threshold voltage due to body effect [memory applications]
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DOI：
10.1109/4.859515
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发表时间：
2000-08
影响因子：
5.4
通讯作者：
Jongshin Shin;I. Chung;Y. Park;H. Min
中科院分区：
文献类型：
--
作者：
Jongshin Shin;I. Chung;Y. Park;H. Min
提出了一种体电压可控的新型电荷泵电路。通过调节体电压，消除了反偏置效应，并使作为开关的MOSFET的阈值电压保持恒定。在不增加阈值电压的情况下，该电荷泵可以获得比传统电荷泵更高的输出电压。利用两个辅助的mosfet来更新体电压，所提出的电荷泵具有理想二极管电荷泵的兼容性能。
A new charge-pump circuit with the controllable body voltage is proposed. By adjusting the body voltage, the back bias effect is removed and the threshold voltage of the MOSFET used as a switch is kept constant. With no threshold voltage increase, higher output voltage than the conventional charge pump can be obtained in the proposed charge pump. With two auxiliary MOSFETs used to update the body voltage, the proposed charge pump shows compatible performance of the ideal diode charge pump.