Gires-Tournois resonators as ultra-narrowband perfect absorbers for infrared spectroscopic devices
Gires-Tournois resonators as ultra-narrowband perfect absorbers for infrared spectroscopic devices
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DOI：
10.1364/oe.27.00a725
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发表时间：
2019-06-10
期刊：
影响因子：
3.8
通讯作者：
Nagao, Tadaaki
中科院分区：
文献类型：
--
作者：
Anh Tung Doan;Thang Duy Dao;Nagao, Tadaaki
提出并实现了在Gires-Tournois标准具中低金属损耗的超窄带理想吸收体和理想发射体。对金属上介质腔、金属-介质-金属谐振腔和分布布拉格反射器（DBR）-介质-金属谐振腔三种结构的Gires-Tournois谐振腔的吸收机理和光谱特性进行了数值模拟和实验研究。基于金属-电介质-金属腔和（DBR）-电介质-金属腔的窄带热发射器的实验表明，发射率分别为0.8和0.82，品质因数分别为21和85。首次将DBR-介质-金属谐振器基吸收体直接负载到LiTaO 3薄膜上，构成了在甲烷吸收带品质因数高达151的片上超窄带热释电探测器。(C)根据OSA开放获取出版协议的条款，2019年美国光学学会
Ultra-narrowband perfect absorbers and emitters are proposed and realized by engineering multiple-beam interference in Gires-Tournois etalon with the presence of low metallic loss. The absorption mechanism and spectral characteristics of the Gires-Tournois resonators are numerically and experimentally investigated for three configurations: dielectric cavity on metal, metal-dielectric-metal resonator, and distributed Bragg reflector (DBR)-dielectric-metal resonator. Narrowband thermal emitters based on the metal-dielectric-metal cavity and (DBR)-dielectric-metal cavity are experimentally demonstrated with an emissivity of 0.8 and 0.82, and a quality factor of 21 and 85, respectively. A DBR-dielectric-metal resonator-based absorber is directly loaded onto a LiTaO3 film for the first time to constitute an on-chip ultra-narrowband pyroelectric detector with an excellent quality factor of 151 at the absorption band of methane. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement