Near infrared transmittance of translucent Si3N4 sinteredceramics
Near infrared transmittance of translucent Si3N4 sinteredceramics
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DOI：
10.1016/j.matlet.2013.01.040
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发表时间：
2013-04
影响因子：
3
通讯作者：
Wenwu Yang;J. Hojo;N. Enomoto;Yumi Tanaka;M. Inada
中科院分区：
文献类型：
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作者：
Wenwu Yang;J. Hojo;N. Enomoto;Yumi Tanaka;M. Inada
采用放电等离子烧结方法，以AlN-MgO为添加剂，对Si 3 N4陶瓷进行烧结。研究了烧结体在0.4-5.5μm波长范围内的光学透过率，重点研究了近红外区的光学透过率。当添加剂含量较大时，烧结体由α-SiAlON组成，在可见光和近红外区均表现出较高的透过率。当添加剂含量较小时，烧结体由β-Si 3 N4组成，在可见光区具有较高的透过率，但在近红外区透过率较低。电子自旋共振谱表明，氮空位产生的未成对电子的吸收是近红外透过率降低的主要原因。
Si3N4was sintered with AlN–MgO additives by spark plasma sintering. The optical transmittances of sintered bodies were studied in the wavelength range of 0.4–5.5μm, especially with emphasis on near infrared region. When the additive content was large, the sintered body was composed of α-SiAlON and showed high transmittance in both visible and near infrared regions. When the additive content was small, the sintered body was composed of β-Si3N4and exhibited high transmittance in visible region but low transmittance in near infrared region. The electron spin resonance spectra indicated that the reduction of near infrared transmittance was due to the absorption by unpaired electrons derived from nitrogen vacancies.