Y2O3-Stabilized ZrO2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition.
Y2O3-Stabilized ZrO2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition.
复制标题
通过金属有机化学气相沉积制备 Y2O3 稳定的 ZrO2 薄膜。
DOI：
10.1143/jjap.37.6229
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发表时间：
1998
影响因子：
1.5
通讯作者：
H. Funakubo
中科院分区：
文献类型：
--
作者：
Tomokazu Matsuzaki;N. Okuda;K. Shinozaki;N. Mizutani;H. Funakubo
采用金属-有机化学气相沉积技术，在不同的晶态衬底上制备了Y2O3稳定的氧化锆膜。制备了Y_2O_3、ZrO_2以及它们的混合物，并对其进行了表征。通过改变Y(C11H19O2)3、Zr(OT-C4H9)4和O2源气体的比例和衬底温度，可以系统地改变薄膜的沉积速率、薄膜成分和结构。通过控制Y(C11H19O2)3与Zr(OT-C4H9)4的分压比，可以调节Y/Zr的比例。然而，Y/Zr比小于根据未混合的Y_2O_3和ZrO_2薄膜的沉积速率估算的值。YSZ薄膜生长中Y_2O_3组分的激活能与YSZ薄膜中的ZrO_2组分的激活能相似。这些YSZ值比未混合的Y2O_3或ZrO_2薄膜的YSZ值大4倍以上。
Zirconia films stabilized by Y2O3 were deposited by metal-organic chemical vapor techniques onto various crystalline substrates. Y2O3, ZrO2 and mixtures of these two were deposited and characterized. The deposition rate, the film composition and the structure could be systematically varied through the Y(C11H19O2)3, Zr(Ot-C4H9)4 and O2 source gas ratios and the substrate temperature. The Y/Zr ratio could be adjusted by controlling the ratio in Y(C11H19O2)3 to Zr(Ot-C4H9)4 partial pressures. However, the Y/Zr ratio was found to be smaller than that estimated based on the deposition rates of unmixed Y2O3 and ZrO2 films. The activation energy of the Y2O3 component in YSZ film growth was similar to that of the ZrO2 component in YSZ films. These YSZ values were more than 4 times larger than those of unmixed Y2O3 or ZrO2 films.