Switching characteristics of certain sputtered thin films
Switching characteristics of certain sputtered thin films
复制标题
某些溅射薄膜的开关特性
DOI：
10.1109/20.104469
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发表时间：
1990
影响因子：
2.1
通讯作者：
M. Khan
中科院分区：
文献类型：
--
作者：
R. Fisher;M. Khan
对由Co/sub75/Ni/sub25/、(Co/sub75/Ni/sub25/)/sub90/Mo/sub10/和(Co/sub75/Ni/sub25/)/sub90/Ta/sub10/原子百分比组成的溅射薄膜的磁性随厚度的变化进行了评估。最佳厚度(300-AA)薄膜的最大矫顽力。厚膜(1000aa)的磁化反转主要由磁化壁位移决定，磁化反转可能伴随着相干旋转。薄膜的磁化反转，即在获得最大矫顽力的最佳厚度处，基本上符合球链模型或扇形机制。>；
Sputtered thin films with compositions consisting of Co/sub 75/NI/sub 25/, (Co/sub 75/Ni/sub 25/)/sub 90/Mo/sub 10/, and (Co/sub 75/Ni/sub 25/)/sub 90/Ta/sub 10/ atomic percent were evaluated relative to their magnetic properties as a function of thickness. The maximum coercive force at the optimum thickness ( 300-AA) films. Magnetization reversal of thick films (1000 AA) was primarily determined by domain wall displacement, which may be followed by coherent rotation. The magnetization reversal in thin films, i.e. at the optimum thickness for maximum coercive force, primarily agrees with a chain-of-spheres model or a fanning mechanism. >