Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability
Vacuum‐Deposited Inorganic Perovskite Memory Arrays with Long‐Term Ambient Stability
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DOI：
10.1002/pssr.201900182
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发表时间：
2019-05
期刊：
影响因子：
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通讯作者：
Chen Zou;Lijun He;Lih Y. Lin
中科院分区：
文献类型：
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作者：
Chen Zou;Lijun He;Lih Y. Lin
最近，金属卤化物钙钛矿由于高的开-关比和低的操作电压以及易于制造而被广泛使用并被认为是存储器器件中的氧化物或硫属化物的替代物。然而，以前研究中的大多数钙钛矿薄膜都是通过实验室规模的溶液处理方法沉积的。它们不直接适用于大规模和批量生产，阻碍了这项技术的商业化。本文首次研究了基于真空沉积无机钙钛矿（VDIP）的存储器件的性能。经过优化的VDIP存储器件具有可靠且可再现的阻变（RS）特性，具有高开关比（>100）、低置位/复位电压（<2 V）以及通过快速脉冲电压操作实现的可逆RS。此外，该装置显示出优异的环境稳定性，并且在环境条件下储存30天后没有观察到明显的降解。柔性衬底上的存储器件在弯曲应力下也显示出良好的机械柔性。此外，还展示了在大规模衬底上具有16 × 16存储单元的VDIP存储器阵列，表明VDIP在高密度、大面积存储器件方面具有强大的潜力。
Recently, metal halide perovskites have been widely used and considered as an alternative to oxides or chalcogenides in memory devices due to the high on–off ratio and low operating voltage, as well as ease of fabrication. However, most of the perovskite thin films in previous studies have been deposited by lab‐scale solution‐processed methods. They are not directly applicable to larger‐scale and volume manufacturing, hindering the commercialization of this technology. Herein, the performance of memory devices based on vacuum‐deposited inorganic perovskite (VDIP) is investigated for the first time. The optimized VDIP‐based memory devices exhibit reliable and reproducible resistive switching (RS) behaviors with a high on–off ratio (>100), low set/reset voltage (<2 V), and reversible RS by fast pulse‐voltage operations. Furthermore, the devices show an excellent ambient stability, and no obvious degradation is observed after storage in an ambient condition for 30 days. The memory devices on flexible substrates also show a good mechanical flexibility under a bending stress. In addition, a VDIP memory array with 16 × 16 memory cells on a large‐scale substrate is demonstrated, suggesting the strong potential of the VDIP for high‐density, large‐area storage devices.