High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers
High aspect ratio features in poly(methylglutarimide) using electron beam lithography and solvent developers
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使用电子束光刻和溶剂显影剂实现聚甲基戊二酰亚胺的高纵横比特征
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发表时间：
2012
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通讯作者：
G. Snider
中科院分区：
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作者：
G. Karbasian;P. Fay;H. Xing;D. Jena;A. Orlov;G. Snider
研究了聚甲基戊二酰亚胺（PMGI）作为电子束抗蚀剂的性能。结果表明，当用弱显影剂二甲苯显影时，PMGI显示出高于12的对比度，这与冷显影的聚（甲基丙烯酸甲酯）中获得的对比度相当，并且是最近使用其他显影剂获得的PMGI对比度的大约两倍。使用这种高对比度聚合物，可以容易地实现具有大于30：1的纵横比的亚20 nm特征。除了上级正性特性之外，该聚合物在较高曝光剂量下表现为负性抗蚀剂。当使用甲基异丁基酮显影负性PMGI时，可以制造小至20 nm的负性抗蚀剂特征。
The properties of poly(methylglutarimide) (PMGI) when used as an electron beam resist are investigated. The results show that PMGI, when developed with a weak developer, xylenes, shows contrast higher than 12, which is comparable to the contrast achieved in cold developed poly(methylmethacrylate), and approximately twice as high as the recently achieved PMGI contrast using other developers. Using this high contrast polymer, sub 20 nm features with aspect ratios greater than 30:1 can be readily achieved. In addition to the superior positive tone behavior, this polymer behaves as a negative tone resist at higher exposure doses. Negative resist features as small as 20 nm can be fabricated when methyl isobutyl ketone is used to develop negative tone PMGI.