Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes
Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes
复制标题
高速交错排列GaAsSb-InP单行载流子光电二极管的演示
DOI：
10.1109/lpt.2004.842343
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发表时间：
2005
影响因子：
2.6
通讯作者：
J. Campbell
中科院分区：
文献类型：
--
作者：
Liguang Zheng;Xiong Zhang;Yuping Zeng;S. R. Tatavarti;S. Watkins;C. Bolognesi;S. Demiguel;J. Campbell
我们展示了交错(“II”)阵列式晶格匹配的GaAs/SUB 0.51/Sb/SUB 0.49/-InP单元载流子光电二极管(UTC-PD)，其应用范围接近1.55/SPLµ/m。GaAsSb吸收层导带边缘比InP高出/SPL Delta/E/subC/=0.11 eV，因此，允许将光生电子直接注入InP收集器--而不需要围绕GaAsSb-InP界面进行成分分级--从而简化了外延生长和器件制造。InP-GaAsSb UTC-PD显示低暗电流水平，并且可测量的带宽受到测试设备的限制。从光响应带宽随器件面积的变化推导出具有1000GaAsSb吸收层的PD(C：5/SPL Times/10/sup 18//cm/sup 3/)和2000InP收集器的渡越极限带宽为105 GHz。
We demonstrate staggered ("type-II") lineup lattice-matched GaAs/sub 0.51/Sb/sub 0.49/-InP unitraveling carrier photodiodes (UTC-PDs) for application near 1.55 /spl mu/m. The GaAsSb absorbing layer conduction band edge lines up /spl Delta/E/sub C/=0.11 eV above that of InP, and hence, allows the direct injection of photogenerated electrons into an InP collector-without any need for compositional grading around the GaAsSb-InP interface-thus simplifying epitaxial growth and device fabrication. InP-GaAsSb UTC-PDs show low dark current levels, and measurable bandwidths are limited by the test equipment. A transit-limited bandwidth of 105 GHz for a PD with a 1000-GaAsSb absorption layer (C:5/spl times/10/sup 18//cm/sup 3/) and a 2000 InP collector is inferred from the variation of photoresponse bandwidth with device area.