Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe(5).
Electronic evidence of temperature-induced Lifshitz transition and topological nature in ZrTe(5).
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DOI：
10.1038/ncomms15512
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发表时间：
2017-05-23
影响因子：
16.6
通讯作者：
Zhou XJ
中科院分区：
文献类型：
--
作者：
Zhang Y;Wang C;Yu L;Liu G;Liang A;Huang J;Nie S;Sun X;Zhang Y;Shen B;Liu J;Weng H;Zhao L;Chen G;Jia X;Hu C;Ding Y;Zhao W;Gao Q;Li C;He S;Zhao L;Zhang F;Zhang S;Yang F;Wang Z;Peng Q;Dai X;Fang Z;Xu Z;Chen C;Zhou XJ
拓扑材料因其独特的电子结构和特殊的物理性质而备受关注。长期以来，ZrTe5的异常输运性质一直是一个谜，其异常的电阻率峰和电荷载流子类型的逆转表现了这一点。预测了单层ZrTe5是一种二维拓扑绝缘体，块体中可能存在一种拓扑相变。在这里，我们报道了基于高分辨率激光的角度分辨光电子能谱测量，测量了ZrTe5的电子结构及其详细的温度演化。我们的结果为温度诱导的Lifshitz相变提供了直接的电子证据，从而自然地理解了ZrTe_5中电阻率反常的潜在来源。此外，我们还观察到了从裂解的ZrTe5样品边缘观察到的一维类电子特征。我们的观察表明，ZrTe5是一个弱的拓扑绝缘体，并且随着层间距的减小，它有成为一个强拓扑绝缘体的趋势。要了解五价锆的反常电子输运性质仍然是一个难以捉摸的谜团。在这里，张等人。报道了直接的电子证据，证明了ZrTe5的电阻率反常和温度诱导的Lifshitz相变的起源，表明它是一个弱的拓扑绝缘体。
The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe5. Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe5. In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe5 samples. Our observations indicate that ZrTe5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced. To understand the anomalous electronic transport properties of ZrTe5 remains an elusive puzzle. Here, Zhang et al. report direct electronic evidence to the origin of the resistivity anomaly and temperature induced Lifshitz transition in ZrTe5, indicating it being a weak topological insulator.