High‐power fast‐atom beam source and its application to dry etching
High‐power fast‐atom beam source and its application to dry etching
复制标题
高功率快原子束源及其在干法刻蚀中的应用
DOI：
10.1116/1.578252
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
F. Shimokawa
中科院分区：
文献类型：
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作者：
F. Shimokawa
通过对McIlraith型离子源的改造，研制出了一种新型高功率快原子束源。具有电磁体和多孔径栅格的源发射的光束电流密度比传统源发射的光束电流密度高10倍（高达1ma /cm2）。因此，当使用CF4气体时，二氧化硅可以以60纳米/分钟的速度蚀刻，或者比使用具有相同放电电流的传统源快6倍。新型FAB源的光束中和系数接近100%。我们已经使用这种FAB源来蚀刻Si， SiO2， GaAs和其他复合材料。我们可以很容易地蚀刻各向异性轮廓（0.6 μm的L&S图案几乎垂直，纵横比超过10），以高速率（0.3-0.5 μm/min）蚀刻，并具有高选择性（砷化镓：抗蚀剂=30:1）。我们还利用CF4反应-快原子束刻蚀技术在0.6 μm L&S上制备了SiO2精细图案。蚀刻深度的均匀性在4 - in上约为±5%。晶片。表面辐射损伤(t…
We have developed a new high‐power fast‐atom beam (FAB) source by modifying a McIlraith‐type ion source. The beam current density emitted from a source with an electromagnet and multiaperture grid is about ten times higher (up to 1 mA/cm2) than that emitted from a conventional source. Silicon dioxide can therefore be etched at 60 nm/min when CF4 gas is used, or about six times faster than by using a conventional source with the same discharge current. The beam neutralization coefficient of the new FAB source is nearly 100%. We have used this FAB source to etch Si, SiO2, GaAs, and other compound materials. We could easily etch an anisotropic profile (nearly vertical with an aspect ratio of more than 10 for a 0.6 μm L&S pattern), etch at a high rate (0.3–0.5 μm/min), and etch with high selectivity (GaAs:resist =30:1). We also fabricated a SiO2 fine pattern in 0.6 μm L&S by using CF4 reactive‐fast‐atom beam etching. The uniformity of the etch depth is about ±5% over a 4‐in. wafer. Surface radiation damage (t...