Nonlinear optical properties of semiconductor quantum wires
Nonlinear optical properties of semiconductor quantum wires
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半导体量子线的非线性光学特性
DOI：
10.1117/12.308634
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
E. Zhukov
中科院分区：
文献类型：
--
作者：
V. Dneprovskii;E. Zhukov
在透明介质基质(温石棉纳米管内)结晶的半导体量子线中观察到了离散频率的非线性光吸收。用相空间填充、量子受限Stark效应和激子屏蔽、非平衡载流子填充大小量子化能带(动态Burstein-Moss效应)、在诱导等离子体高密度下一维能带的重整化来解释量子线吸收的诱导变化。激子结合能的测量值远大于相应的体相半导体。激子结合能的增加不仅可以归因于量子限制，而且还可以归因于“介电限制”--由于半导体纳米线和介电基质的介电常数的不同，电子-空穴引力的增加。
Nonlinear optical absorption at discrete frequencies has been observed in semiconductor quantum wires crystallized in transparent dielectric matrix (inside chrysotile asbestos nanotubes). The induced changes of absorption in quantum wires have been explained by phase space filling, quantum- confined Stark effect and screening of excitons; filling of the size-quantized energy bands with nonequilibrium carriers (dynamic Burstein-Moss effect); renormalization of the 1D energy bands at high density of the induced plasma. The measured values of exciton binding energies are much greater than that of the corresponding bulk semiconductors. The increase of the exciton binding energy may be attributed not only to the quantum confinement but also to the `dielectric confinement'--to the increase of electron-hole attraction because of the difference in dielectric constants of semiconductor nanowires and dielectric matrix.