New Insight into Total-Ionizing-Dose Effect Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation

New Insight into Total-Ionizing-Dose Effect Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation
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DOI:
10.1109/tns.2022.3231877
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发表时间:
2022
期刊:
IEEE Transactions on Nuclear Science
影响因子:
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通讯作者:
Bo Zhang
Bo Zhang
中科院分区:
--
文献类型:
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作者:
Xin Zhou;Langtao Chen;Chen Chen;Ming Qiao;Zhaoji Li;Bo Zhang

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