150mm full wafer fabrication and characterization of 940nm emitting VCSELs for high-volume manufacture
150mm full wafer fabrication and characterization of 940nm emitting VCSELs for high-volume manufacture
复制标题
用于大批量生产的 150mm 全晶圆制造和 940nm 发射 VCSEL 的表征
DOI：
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
P. Smowton
中科院分区：
文献类型：
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作者：
D. Hayes;T. Peach;J. Baker;S. Gillgrass;C. Allford;A. Sobiesierski;C. Eng;Saleem Shabbir;Stuart N. Thomas;C. Hentschel;C. Meaton;S. Shutts;A. Daly;Tracy K. N. Sweet;I. Davies;P. Smowton
垂直腔面发射激光器（VCSEL）的大批量低成本生产将使其在新的商品市场中得到利用。我们报告了从研究级制造到在整个150 mm晶片上生产氧化物限制VCSEL的成功放大。晶片上的光-电流-电压（L-I-V）和光谱测量进行了分析，以确定跨晶片的阈值电流，阈值电流密度和发射波长的变化，这是比较与反射率测量后立即生长。我们研究了VCSEL性能在一系列器件尺寸上对制造参数的依赖性，以评估外延材料或晶片加工的不均匀性是否会引起变化。
High-volume low-cost production of vertical cavity surface emitting lasers (VCSELs) will allow their exploitation in new commodity markets. We report the successful scaling up from research level fabrication to produce oxide confined VCSELs across a whole 150mm wafer. On-wafer light-current-voltage (L-I-V) and spectral measurements are analyzed to determine the cross-wafer variations in threshold current, threshold current densities and emission wavelength, which is compared with reflectivity measurements taken immediately after growth. We examine the dependence of VCSEL performance on fabrication parameters over a range of device dimensions to assess whether variation arises from non-uniformity of the epitaxial material or wafer processing.