Raman scattering in carbon-doped InAs
Raman scattering in carbon-doped InAs
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DOI：
10.1063/1.2168015
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发表时间：
2006-01
影响因子：
4
通讯作者：
S. Najmi;X. Zhang;Xiwen Chen;M. Thewalt;S. Watkins
中科院分区：
文献类型：
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作者：
S. Najmi;X. Zhang;Xiwen Chen;M. Thewalt;S. Watkins
通过拉曼光谱研究了有机金属气相外延生长的碳掺杂 InAs 样品。在 527cm−1 处确定的局部振动模式 (LVM) 与二次离子质谱测量中的碳浓度相关，并且基于其他 III-V 族中的 LVM 趋势，似乎与替代受体一致。另一方面，随着碳浓度的增加，观察到 n 型掺杂的增加，这表明碳也会产生施主，要么是替代点缺陷，要么是络合物。生长的样品中存在 386cm−1 的额外 LVM，可以通过在氮气下退火来消除。这种模式归因于碳氢复合物。
Carbon-doped InAs samples grown by organometallic vapor phase epitaxy were studied by Raman spectroscopy. A local vibrational mode (LVM) identified at 527cm−1 correlated with carbon concentration from secondary ion mass spectroscopy measurements, and based on LVM trends in other III-Vs, appears to be consistent with substitutional acceptors. On the other hand, an increase in n-type doping is observed with increasing carbon concentration, which suggests that carbon also generates donors, either substitutional point defects, or complexes. An additional LVM at 386cm−1 is present in as-grown samples, and can be eliminated by annealing under nitrogen. This mode is attributed to a carbon-hydrogen complex.