Fabrication methods based on wet etching process for the realization of silicon MEMS structures with new shapes
Fabrication methods based on wet etching process for the realization of silicon MEMS structures with new shapes
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DOI：
10.1007/s00542-009-0956-5
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发表时间：
2010-07-01
影响因子：
2.1
通讯作者：
Sato, Kazuo
中科院分区：
文献类型：
--
作者：
Pal, Prem;Sato, Kazuo
在本文中，开发了制造方法，以便在{100}硅晶片上实现具有新形状的硅微机电系统组件。制造工艺采用湿法蚀刻和一步光刻技术。硅蚀刻在互补金属氧化物半导体工艺兼容的纯且表面活性剂 Triton-X-100 [C(14)H(22)O(C(2)H(4)O] (n) ，n = 9-10) 添加四甲基氢氧化铵 (TMAH) 溶液中进行。装配式结构分为两类：固定式和独立式。固定结构在单个氧化硅晶圆中实现，而独立结构则在基于氮化硅的绝缘体上硅 (SOI) 晶圆中形成。 SOI 晶圆的制备方法是将氧化晶圆和氮化晶圆沉积在一起，然后进行减薄和化学机械抛光工艺。在纯 TMAH 溶液和添加 Triton 的 TMAH 溶液中测量蚀刻结果，例如 {100} 和 {110}Si 蚀刻速率、圆角凹角和尖凸角处的底切以及蚀刻表面形态。使用不同浓度的 TMAH 来优化蚀刻条件，以获得所需的蚀刻轮廓。
In this paper, fabrication methods are developed in order to realize the silicon microelectromechanical systems components with new shapes in {100} Si wafers. Fabrication process utilizes wet etching with a single step of photolithography. The silicon etching is carried out in complementary metal oxide semiconductor process compatible pure and surfactant Triton-X-100 [C(14)H(22)O(C(2)H(4)O] (n) , n = 9-10) added tetramethylammonium hydroxide (TMAH) solutions. The fabricated structures are divided in two categories: fixed and freestanding. The fixed structures are realized in single oxidized silicon wafers, while freestanding are formed in silicon nitride-based silicon on insulator (SOI) wafers. The SOI wafers are prepared by bonding the oxidized and the nitride deposited wafers, followed by thinning and chemical mechanical polishing processes. The etching results such as {100} and {110}Si etch rates, undercutting at rounded concave and sharp convex corners and etched surface morphologies are measured in both pure and Triton added TMAH solutions. Different concentrations of TMAH are used to optimize the etching conditions for desired etched profiles.