Some Properties of High Resistivity P -Type Germanium
Some Properties of High Resistivity P -Type Germanium
复制标题
高电阻率P型锗的一些特性
DOI：
--
复制
发表时间：
1950
期刊：
影响因子：
--
通讯作者：
W. Dunlap
中科院分区：
文献类型：
--
作者：
W. Dunlap
总结了高电阻率、均质$P$型锗单晶的一些特性。研究了该材料的霍尔效应、电阻率和整流特性随温度和磁场变化的变化。通过计算 $\frac{{10}^{8}R}{\ensuremath{\rho}}$ 获得了 25\ifmmode^\circ\else\text Degree\fi{}C 处的非常高的迁移率数字（对于 3600 高斯的场，\ensuremath{\sim}2730 ${\mathrm{cm}}^{2}$/volt-sec.）。指出了霍尔探头接触类型对霍尔效应测量的影响。该材料的电阻率平均为 18.8 ohm-cm，霍尔系数为 5.14\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}4}$ volt-cm/amp.-gauss。在 13,750 高斯的磁场中，这种锗的磁阻约为 22%。霍尔系数在 3600 至 13,750 高斯之间下降了约 22%。根据霍尔效应数据，一个样品的能带间隔为 0.82 伏，根据电阻率数据为 0.75 伏。发现在 78 至 400\ifmmode^\circ\else\text Degree\fi{}K 温度范围内，迁移率遵循 ${T}^{\ensuremath{-}2.0}$ 定律。这种$P$型材料仅表现出轻微的矫正。
A summary is given of some characteristics of single crystals of high resistivity, homogeneous, $P$-type germanium. The Hall effect, resistivity, and rectification characteristics of this material were studied with respect to changes of temperature and magnetic field. A very high mobility figure at 25\ifmmode^\circ\else\textdegree\fi{}C (\ensuremath{\sim}2730 ${\mathrm{cm}}^{2}$/volt-sec. for a field of 3600 gauss) was obtained by calculating $\frac{{10}^{8}R}{\ensuremath{\rho}}$. An effect of type of contact at the Hall probes on Hall effect measurements is pointed out. The resistivity of the material was 18.8 ohm-cm average, the Hall coefficient 5.14\ifmmode\times\else\texttimes\fi{}${10}^{\ensuremath{-}4}$ volt-cm/amp.-gauss. The magneto-resistance of this germanium amounted to about 22 percent in a field of 13,750 gauss. The Hall coefficient decreased by about 22 percent between 3600 and 13,750 gauss. The band separation for one sample was 0.82 volts from Hall effect data, 0.75 from the resistivity. The mobility was found to obey a ${T}^{\ensuremath{-}2.0}$ law in the temperature range 78 to 400\ifmmode^\circ\else\textdegree\fi{}K. This $P$-type material exhibited only slight rectification.