A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals.
A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals.
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DOI：
10.1021/acsnano.8b08712
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发表时间：
2018-07
期刊：
影响因子：
17.1
通讯作者：
Ruizhi Wang;D. Purdie;Ye Fan;F. Massabuau;P. Braeuninger-Weimer;Oliver J. Burton;R. Blume;R. Schloegl;A. Lombardo;R. Weatherup;S. Hofmann
中科院分区：
文献类型：
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作者：
Ruizhi Wang;D. Purdie;Ye Fan;F. Massabuau;P. Braeuninger-Weimer;Oliver J. Burton;R. Blume;R. Schloegl;A. Lombardo;R. Weatherup;S. Hofmann
六方氮化硼（h-BN）是除了石墨之外唯一已知的具有由简单、稳定、无波纹的原子薄层组成的结构的材料。虽然历史上用作粉末形式的润滑剂，但h-BN层作为最终薄的绝缘体、阻挡层或密封剂变得特别有吸引力。实际上，目前所有新兴的电子和光子器件概念都依赖于从小块体微晶剥离的h-BN，这限制了器件尺寸和工艺可扩展性。我们在这里专注于Pt催化的h-BN晶体形成的系统性理解，以通过集成化学气相沉积（CVD）工艺解决单层h-BN的这种集成挑战，该集成化学气相沉积（CVD）工艺使得h-BN晶畴尺寸超过0.5 mm并且在小于45分钟的生长时间内形成合并的连续层。可重复使用的Pt箔，并允许分层过程，以方便和清洁的h-BN层转移。我们展示了顺序拾取的原子层精度的石墨烯/h-BN异质结构的组装，同时最大限度地减少界面污染。该方法可以很容易地与其他分层材料结合，并使CVD h-BN集成到高质量，可靠的2D材料器件层堆叠中。
Hexagonal boron nitride (h-BN) is the only known material aside from graphite with a structure composed of simple, stable, noncorrugated atomically thin layers. While historically used as a lubricant in powder form, h-BN layers have become particularly attractive as an ultimately thin insulator, barrier, or encapsulant. Practically all emerging electronic and photonic device concepts currently rely on h-BN exfoliated from small bulk crystallites, which limits device dimensions and process scalability. We here focus on a systematic understanding of Pt-catalyzed h-BN crystal formation, in order to address this integration challenge for monolayer h-BN via an integrated chemical vapor deposition (CVD) process that enables h-BN crystal domain sizes exceeding 0.5 mm and a merged, continuous layer in a growth time of less than 45 min. The process makes use of commercial, reusable Pt foils and allows a delamination process for easy and clean h-BN layer transfer. We demonstrate sequential pick-up for the assembly of graphene/h-BN heterostructures with atomic layer precision, while minimizing interfacial contamination. The approach can be readily combined with other layered materials and enables the integration of CVD h-BN into high-quality, reliable 2D material device layer stacks.