Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability
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DOI：
10.1109/ted.2019.2938262
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发表时间：
2019-10
影响因子：
3.1
通讯作者：
K. Puschkarsky;Tibor Grasser;T. Aichinger;W. Gustin;Hans Reisinger
中科院分区：
文献类型：
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作者：
K. Puschkarsky;Tibor Grasser;T. Aichinger;W. Gustin;Hans Reisinger
概述了在碳化硅功率MOSFET可靠性方面存在的问题和研究结果。本文的重点是阈值不稳定性及其与硅功率MOSFET的区别。比较和讨论了表征阈值电压不稳定性的测量技术。基于捕获-发射-时间(CET)图的阈值电压不稳定性建模是一个中心课题。该建模方法考虑了完整的栅极偏置/温度历史。它包括栅极应力极性，并能够再现与应用相关的50 kHz双极交流应力期间的短期阈值变化。此外，还讨论了其对电路运行的影响。
An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to Si power MOSFETs. Measurement techniques for the characterization of the threshold voltage instabilities are compared and discussed. Modeling of the threshold voltage instabilities based on capture–emission-time (CET) maps is a central topic. This modeling approach takes the complete gate bias/temperature history into account. It includes both gate stress polarities and is able to reproduce the short-term threshold variations during application-relevant 50-kHz bipolar ac-stress. In addition, the impact on circuit operation is discussed.