Y.Miyamoto: "GaInAs/InP OMVPE regrowth for ultra-fine buried heterostructure with 50nm pitch toward electron wave devices" To be presented at ICMOVPE VII. (1994)
Y.Miyamoto: "GaInAs/InP OMVPE regrowth for ultra-fine buried heterostructure with 50nm pitch toward electron wave devices" To be presented at ICMOVPE VII. (1994)
复制标题
Y.Miyamoto:“GaInAs/InP OMVPE 再生长,用于电子波器件的 50nm 节距的超细掩埋异质结构” 将在 ICMOVPE VII 上发表。
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: