Magnon transistor for all-magnon data processing.
Magnon transistor for all-magnon data processing.
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DOI：
10.1038/ncomms5700
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发表时间：
2014-08-21
影响因子：
16.6
通讯作者：
Hillebrands, Burkard
中科院分区：
文献类型：
--
作者：
Chumak, Andrii V.;Serga, Alexander A.;Hillebrands, Burkard
下一代信息处理的一个吸引人的方向是开发使用粒子或准粒子而不是电子的系统-理想情况下具有低耗散-作为信息载体。其中一个候选者是磁振子：一种与磁性材料的本征激发相关的准粒子，称为自旋波。单片全磁振子信息系统的实现要求开发磁振子本身可以控制磁振子电流的电路。利用磁子晶体这一人造磁性材料来增强磁振子-磁振子的非线性相互作用，我们成功地实现了磁振子对磁振子的控制，并研制出了磁振子晶体管。我们提出了一种由电绝缘磁性材料制成的三端子器件的概念证明。我们证明，通过向晶体管的栅极注入磁子，可以将从晶体管的源极流向漏极的磁子密度降低三个数量级。局域磁序中的扰动可以像波一样在材料上传播。Chumak等人。现在展示一个晶体管，它工作在这些所谓的自旋波的单个量子上，被称为磁振子，它可能是基于磁性材料的信息处理的中心元素。
An attractive direction in next-generation information processing is the development of systems employing particles or quasiparticles other than electrons—ideally with low dissipation—as information carriers. One such candidate is the magnon: the quasiparticle associated with the eigen-excitations of magnetic materials known as spin waves. The realization of single-chip all-magnon information systems demands the development of circuits in which magnon currents can be manipulated by magnons themselves. Using a magnonic crystal—an artificial magnetic material—to enhance nonlinear magnon–magnon interactions, we have succeeded in the realization of magnon-by-magnon control, and the development of a magnon transistor. We present a proof of concept three-terminal device fabricated from an electrically insulating magnetic material. We demonstrate that the density of magnons flowing from the transistor’s source to its drain can be decreased three orders of magnitude by the injection of magnons into the transistor’s gate. A disturbance in the local magnetic order can propagate across a material just like a wave. Chumak et al. now demonstrate a transistor operating on a single quantum of these so-called spin waves, known as a magnon, which could be a central element for magnetic-material-based information processing.
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影响因子：
4
作者：
Chumak, A. V.;Serga, A. A.;Kostylev, M. P.
通讯作者：
Kostylev, M. P.
影响因子：
64.8
作者：
Chen, Hou-Tong;Padilla, Willie J.;Averitt, Richard D.
通讯作者：
Averitt, Richard D.
影响因子：
8.6
作者：
Chumak, A. V.;Vasyuchka, V. I.;Hillebrands, B.
通讯作者：
Hillebrands, B.
影响因子：
1.1
作者：
Kazakov, GT;Kozhevnikov, AV;Filimonov, YA
通讯作者：
Filimonov, YA
影响因子：
4
作者：
Chumak, A. V.;Serga, A. A.;Kostylev, M. P.
通讯作者：
Kostylev, M. P.