Extremely low excess noise InAlAs avalanche photodiodes
Extremely low excess noise InAlAs avalanche photodiodes
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极低的过量噪声 InAlAs 雪崩光电二极管
DOI：
10.1109/iciprm.2007.381127
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
Tan C
中科院分区：
文献类型：
--
作者：
Tan C
在雪崩增益为10时，在雪崩区为0.11μm ~ 2.53μm的p ~+in ~+InAlAs系列二极管上测得的过量噪声因子<4。对应于0.15 < k < 0.25的有效电离系数比k的极低的过量噪声显示了InAlAs作为雪崩光电二极管的倍增区的潜力。从这些二极管的倍增特性得到的击穿电压表现出的雪崩宽度的击穿电压的线性关系。利用由电流-电压测量得到的隧道参数和由增益和过量噪声测量得到的电离系数和阈值能量，计算表明，在前置放大器噪声为15 pAHz-1/2的情况下，InAlAs雪崩光电二极管的灵敏度为~28.8dBm。
Excess noise factors <4 at avalanche gain of 10 measured on a series of p+in+InAlAs diodes with avalanche regions ranging from 0.11μm to 2.53μm. Extremely low excess noise, corresponding to effective ionization coefficient ratios, k, of 0.15 < k < 0.25, showed the potential of InAlAs as multiplication region for avalanche photodiodes. Breakdown voltage obtained from multiplication characteristics of these diodes showed a linear dependence of breakdown voltage on the avalanche width. Using tunnelling parameters derived from current-voltage measurements with the ionization coefficients and threshold energies derived from gain and excess noise measurements, our calculations showed that InAlAs avalanche photodiodes have sensitivities of ~28.8dBm assuming a rather high pre-amplifier noise of 15pAHz-1/2.