Surface defects on SOI wafers and their influence on device characteristics
Surface defects on SOI wafers and their influence on device characteristics
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SOI晶圆表面缺陷及其对器件特性的影响
DOI：
10.1002/ecjb.1125
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
Y. Mashiko
中科院分区：
文献类型：
--
作者：
H. Naruoka;N. Hattori;T. Iwamatsu;T. Ipposhi;M. Sudo;T. Nakai;H. Yamamoto;Y. Mashiko
我们已经分类的表面缺陷中存在的两种晶片处理的高剂量隔离注入氧（HD-SIMOX），其中的起始衬底生长的直拉（CZ）和外延（EPI）的方法，分别。我们的分类包括几种类别，根据我们的调查，这些缺陷的密度和分布。此外，我们通过牺牲氧化层来改变缺陷的形状，并研究了它们的横截面结构。表面缺陷的两个主要类别是坑型缺陷和起伏型缺陷。我们的观点是，前者是由于生长在缺陷，如晶体起源的颗粒（COP），后者的行为，这些颗粒在注入和SIMOX退火阶段。我们还研究了表面缺陷对氧化层的完整性和埋氧（BOX）材料的质量的影响。我们发现，在减薄过程中失去绝缘体上硅（SOI）层的一些起伏型缺陷会降低氧化膜的完整性，而在减薄过程中同时失去BOX层和SOI层的那些缺陷会导致氧化膜完整性和BOX泄漏的降低。© 2003 Wiley Periodicals，Inc. Electron Comm Jpn Pt 2，86（7）：64-72，2003;在线发表于Wiley InterScience（www.interscience.wiley.com）。DOI 10.1002/ecjb.1125
We have classified the surface defects present in two kinds of wafers processed by high-dose separation by implanted oxygen (HD-SIMOX), for which the starting substrates were grown by the Czochralski (CZ) and epitaxial (EPI) methods, respectively. Our classification included several kinds of categories, based on our investigations of the densities and distributions of these defects. In addition, we varied the shapes of the defects by sacrificing the oxide layers, and investigated their cross-sectional structure. The two main classes of surface defects are pit-type defects and undulation-type defects. Our view is that the former are attributable to grown-in defects such as crystal-originated particles (COPs), the latter to the behavior of these particles during the implantation and SIMOX anneal stages. We also investigated the influence of surface defects on the integrity of the oxide layer and the quality of the buried-oxide (BOX) material. We found that some undulation-type defects that lose the silicon-on-insulator (SOI) layer during the thinning process can degrade the oxide film integrity, while those defects that lose both the BOX layer and the SOI layer during the thinning process can lead to both degradation of the oxide film integrity and BOX leakage. © 2003 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 86(7): 64–72, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.1125