Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
复制标题
DOI：
10.1103/physrevx.7.021046
复制
发表时间：
2017-06-23
影响因子：
12.5
通讯作者：
Awschalom, David D.
中科院分区：
文献类型：
--
作者：
Christle, David J.;Klimov, Paul V.;Awschalom, David D.
SiC中的空缺是一类顺磁缺陷，由于其长寿命的电子自旋相干性和近电信波长的光学寻址性，它们在量子通信技术中显示出前景。然而，高保真的自旋光子界面，这是这种技术的关键先决条件，还没有被证明。在这里，我们证明了这种界面存在于3C-SiC和4H-SiC外延膜中的孤立缺口中。我们的数据表明，在4H-SiC中的空位具有最小的不良自旋混合，并且我们当前样品中的光学线宽已经与最近在其他系统中演示的远程纠缠相似。此外，我们发现3C-SiC空缺具有毫秒级的哈恩回波自旋相干时间，这是在天然同位素固体中测量到的最长时间之一。具有这些特性的缺陷存在于可在硅上异质外延生长为薄膜的商用半导体中，显示出基于SiC缺陷的未来量子网络的前景。
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optical addressability at near-telecom wavelengths. Nonetheless, a high-fidelity spin-photon interface, which is a crucial prerequisite for such technologies, has not yet been demonstrated. Here, we demonstrate that such an interface exists in isolated divacancies in epitaxial films of 3C-SiC and 4H-SiC. Our data show that divacancies in 4H-SiC have minimal undesirable spin mixing, and that the optical linewidths in our current sample are already similar to those of recent remote entanglement demonstrations in other systems. Moreover, we find that 3C-SiC divacancies have a millisecond Hahn-echo spin coherence time, which is among the longest measured in a naturally isotopic solid. The presence of defects with these properties in a commercial semiconductor that can be heteroepitaxially grown as a thin film on Si shows promise for future quantum networks based on SiC defects.