Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films
Large reduction of leakage current by graded-layer La doping in (Ba0.5, Sr0.5)TiO3 thin films
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DOI：
10.1063/1.1371791
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发表时间：
2001-06
影响因子：
4
通讯作者：
S. Saha;S. .. Krupanidhi
中科院分区：
文献类型：
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作者：
S. Saha;S. .. Krupanidhi
通过梯度层施主掺杂，观察到（Ba，Sr）TiO 3（BST）薄膜的漏电流行为大大降低。通过在生长的BST薄膜中引入La掺杂的BST层，实现了梯度掺杂。在100 kV/cm的电场下，与未掺杂的薄膜相比，薄膜的漏电流大幅降低（约6个数量级）。漏电流的大幅度降低归因于高阻层的形成，源于氧化环境中生长的La掺杂薄膜所涉及的补偿缺陷化学。研究了漏电流随温度变化的行为，探讨了导电机制，并从Poole-Frenkel导电机制中寻求对结果的解释。
A large reduction in the leakage current behavior in (Ba, Sr)TiO3 (BST) thin films was observed by graded-layer donor doping. The graded doping was achieved by introducing La-doped BST layers in the grown BST films. The films showed a large decrease (about six orders of magnitude) in the leakage current in comparison to undoped films at an electric field of 100 kV/cm. The large decrease in leakage current was attributed to the formation of highly resistive layers, originating from compensating defect chemistry involved for La-doped films grown in oxidizing environment. Temperature-dependent leakage-current behavior was studied to investigate the conduction mechanism and explanations of the results were sought from Poole–Frenkel conduction mechanism.