Cathodic Electrophoretic Deposition of Ceramic Nano-Particle Manganese Zinc Ferrite
Cathodic Electrophoretic Deposition of Ceramic Nano-Particle Manganese Zinc Ferrite
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陶瓷纳米颗粒锰锌铁氧体的阴极电泳沉积
DOI：
10.4028/www.scientific.net/kem.314.127
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
S. Kurinec
中科院分区：
文献类型：
--
作者：
C. Washburn;J. Jorné;S. Kurinec
采用电泳沉积法在硅衬底上制备了微/纳米锰锌铁氧体（MnxZn 1-xFe 2 O 4）材料。EPD在含有充电剂和粘合剂的异丙醇（IPA）溶液中进行。采用工业高磁导率Mn-Zn铁氧体陶瓷烧结环研磨法制备了铁氧体粉末。在30分钟内淀积的铁氧体薄膜厚度达4μm，对250 nm热生长二氧化硅图案化的硅显示出良好的选择性。此外，在n型硅衬底中的重掺杂p型区域上已经观察到选择性沉积。沉积过程是一个自限性过程，初始高电泳电流在10分钟内下降到其值的10%。该结果表明，大部分铁素体沉积发生在前10分钟。沉积速率和zeta电位测量结果表明，在2cm电极间距上产生的电场为160 V/cm的情况下，颗粒速度约为5.7 × 10 -3 cm/s。在沉积的衬底中观察到非晶状界面层。扫描电子显微镜显示图案填充和共形沉积的铜平面微电感制造的化学机械平坦化。这些结果是有希望的粉末铁氧体材料（硬和软），以选择性地沉积在微电子无源元件和在MEM的应用的各种各样的应用
The electrophoretic deposition (EPD) of micro/nano-particle manganese zinc ferrite (Mnx Zn1-xFe2O4) material has been carried out on silicon substrates. EPD is performed in isopropanol (IPA) solutions containing charging and adhesion agents. The ferrite powders were prepared by grinding ceramic sintered toroids of a commercial high permeability Mn-Zn ferrite. The ferrite film has been deposited up to 4μm in thickness in 30 minutes showing good selectivity to silicon patterned with 250nm thermally grown silicon dioxide. Additionally, selective deposition has been observed on heavily doped p-type regions in n-type silicon substrates. The deposition process is a self limiting process with the initial high elerophoretic current declining to 10% of its value in 10 minutes. This result suggests that majority of ferrite deposition occurs in first 10 minutes. The deposition rate and zeta potential measurements indicate a high particle velocity on the order 5.7x10-3 cm/s with an electric field of 160V/cm generated across the 2 cm electrode spacing. An amorphous like interfacial layer is observed in as deposited substrates. The scanning electron micrographs indicate pattern filling and conformal deposition on copper planar micro-inductors fabricated by chemical mechanical planarization. These results are promising for powder ferrite material (hard and soft) to be selectively deposited for a wide variety of applications in microelectronics passive components and in MEM’s based applications