Light Sensing in a Photoresponsive, Organic-Based Complementary Inverter
Light Sensing in a Photoresponsive, Organic-Based Complementary Inverter
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DOI：
10.1021/am101284m
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发表时间：
2011-05-01
影响因子：
9.5
通讯作者：
Pyo, Seungmoon
中科院分区：
文献类型：
--
作者：
Kim, Sungyoung;Lim, Taehoon;Pyo, Seungmoon
制作了一种光响应型有机互补逆变器，并对其光感特性进行了研究。将p沟道五苯和n沟道六氟酞菁铜（F16CuPc）有机薄膜晶体管（OTFTs）与聚合物栅极电介质进行集成，制备了有机电路。F16CuPc OTFT在光照下表现出典型的n型特性和较强的光响应。而在光照下，并五苯OTFT表现出较弱的光响应，具有典型的p型特征。有机电光电路的特性可以由入射光强度、栅极偏置或两者同时控制。逻辑阈值（V- m，当V- in = V- out时）从没有照明的28.6 V降低到6.94 mW/cm时的19.9 V(2)。通过单独使用光脉冲信号或光脉冲和电脉冲信号的组合，在这种类型的有机电路中展示了光传感，这表明该电路可以潜在地用于各种光电子应用，包括光传感器、光电探测器和光电收发器。
A photoresponsive organic complementary inverter was fabricated and its light sensing characteristics was studied. An organic circuit was fabricated by integrating p-channel pentacene and n-channel copper hexadecafluorophthalocyanine (F16CuPc) organic thin-film transistors (OTFTs) with a polymeric gate dielectric. The F16CuPc OTFT showed typical n-type characteristics and a strong photoresponse under illumination. Whereas under illumination the pentacene OTFT showed a relatively weak photoresponse with typical p-type characteristics. The characteristics of the organic electro-optical circuit could be controlled by the incident light intensity, a gate bias, or both. The logic threshold (V-M, when V-IN = V-OUT) was reduced from 28.6 V without illumination to 19.9 v at 6.94 mW/cm(2). By using solely optical or a combination of optical and electrical pulse signals, light sensing was demonstrated in this type of organic circuit, suggesting that the circuit can be potentially used in various optoelectronic applications, including optical sensors, photodetectors and electro-optical transceivers.